BDX53A/53b/53c bdx54b/54c complementary silicon power darlington transistors n bdx53b, bdx53c, bdx54b and bdx54c are sgs-thomson preferred salestypes applications n audio amplifiers n linear and switching industrial equipment description the BDX53A, bdx53b and bdx53c are silicon epitaxial-base npn power transistors in monolithic darlington configuration and are mounted in jedec to-220 plastic package. they are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. the complementary pnp types for bdx53b and bdx53c are the bdx54b and bdx54c respectively. internal schematic diagram september 1997 absolute maximum ratings symbol parameter value unit npn BDX53A bdx53b bdx53c pnp bdx54b bdx54c v cbo collector-base voltage (i e =0) 60 80 100 v v ceo collector-emitter voltage (i b =0) 60 80 100 v v ebo emitter-base voltage (i c =0) 5 v i c collector current 8 a i cm collector peak current (repetitive) 12 a i b base current 0.2 a p tot total dissipation at t c 25 o c60w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 to-220 r 1 typ. = 10 k w r 2 typ. = 150 w 1/6
thermal data r thj-case r t hj- amb thermal resistance junction-case max thermal resistance junction-ambient max 2.08 70 o c/w o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e =0) for BDX53A v cb =60v for bdx53b/54b v cb =80v for bdx53c/54c v cb =100v 0.2 0.2 0.2 ma ma ma i ceo collector cut-off current (i b =0) for BDX53A v cb =30v for bdx53b/54b v cb =40v for bdx53c/54c v cb =50v 0.5 0.5 0.5 ma ma ma i ebo emitter cut-off current (i c =0) v eb =5v 2 ma v ceo(sus ) * collector-emitter sustaining voltage (i b =0) i c =100ma for BDX53A for bdx53b/54b for bdx53c/54c 60 80 100 v v v v ce(sat) * collector-emitter saturation voltage i c =3a i b =12 ma 2 v v be(s at) * base-emitter saturation voltage i c =3a i b =12 ma 2.5 v h fe * dc current gain i c =3a v ce = 3 v 750 v f * parallel-diode forward voltage i f =3a i f =8a 1.8 2.5 2.5 v v * pulsed: pulse duration = 300 m s, duty cycle 1.5 % for pnp types voltage and current values are negative. safe operating area derating curve BDX53A/53b/53c-bdx54b/54c 2/6
dc current gain (npn type) collector emitter saturation voltage (npn type) base emitter saturation voltage (npn type) dc current gain (pnp type) collector emitter saturation voltage (pnp type) base emitter saturation voltage (pnp type) BDX53A/53b/53c-bdx54b/54c 3/6
base emitter on voltage (npn type) freewheel diode forward voltage (npn type) base emitter on voltage (pnp type) freewheel diode forward voltage (pnp type) switching time resistive load (npn type) switching time resistive load (pnp type) BDX53A/53b/53c-bdx54b/54c 4/6
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 13 == b e == b2 g 2 a c2 c h a1 detail oao a2 detail oao to-252 (dpak) mechanical data 0068772-b BDX53A/53b/53c-bdx54b/54c 5/6
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada- china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a ... BDX53A/53b/53c-bdx54b/54c 6/6
|
